The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2007
Filed:
Mar. 07, 2005
Bruno Ghyselen, Seyssinet-Pariset, FR;
Cécile Aulnette, Grenoble, FR;
Bénédite Osternaud, St Laurent du Pont, FR;
Takeshi Akatsu, Saint Nazaire les Eymes, FR;
Yves Mathieu Le Vaillant, Crolles, FR;
Bruno Ghyselen, Seyssinet-Pariset, FR;
Cécile Aulnette, Grenoble, FR;
Bénédite Osternaud, St Laurent du Pont, FR;
Takeshi Akatsu, Saint Nazaire les Eymes, FR;
Yves Mathieu Le Vaillant, Crolles, FR;
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
The invention relates to a method of transferring useful layers from a donor wafer which includes a multi-layer structure on the surface of the donor wafer that has a thickness sufficient to form multiple useful layers for subsequent detachment. The layers may be formed of materials having sufficiently different properties such that they may be selectively removed. The layers of material may also include sub-layers that can be selectively removed from each other.