The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2007

Filed:

May. 18, 2005
Applicants:

Elad Irron, Gush Segev, IL;

Eitan Avni, Karmiel, IL;

Inventors:

Elad Irron, Gush Segev, IL;

Eitan Avni, Karmiel, IL;

Assignee:

AVX Israel, Ltd., Jerusalem, IL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A precision RF passive component including: a silicon substrate; a first dielectric layer deposited above the silicon substrate; a first metal layer formed above the first dielectric layer; a second dielectric layer formed above the first metal layer; and a second metal layer formed above the second dielectric layer. In one embodiment a passivation layer is added above the second metal layer. In an exemplary embodiment the first metal layer includes a first adhesion layer, a metal sub-layer, and a second adhesion layer; and the second dielectric layer includes a first diffusion barrier layer, a dielectric sub-layer second diffusion barrier. In an exemplary embodiment, the metal sub-layer includes copper. In another exemplary embodiment the dielectric sub-layer includes SiOor SiNbetween diffusion barrier layers including SiN.


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