The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2007
Filed:
Sep. 28, 2004
Shiao-shien Chen, Chung-Li, TW;
Tsun-lai Hsu, Hsinchu Hsien, TW;
Tien-hao Tang, Taipei Hsien, TW;
Hua-chou Tseng, Hsinchu, TW;
Shiao-Shien Chen, Chung-Li, TW;
Tsun-Lai Hsu, Hsinchu Hsien, TW;
Tien-Hao Tang, Taipei Hsien, TW;
Hua-Chou Tseng, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A structure of an electrostatic discharge protection circuit, in which a buried layer is formed in the substrate of the electrostatic discharge protection circuit, and a sinker layer electrically connected to the buried layer and a drain is also formed therein. Thereby, when the electrostatic discharge protection circuit is activated, the current flows from a source through the buried layer and the sinker layer to the drain. The current flow path is remote from the gate dielectric layer to avoid damaging the gate dielectric by a large current, so as to improve the dielectric strength of the electrostatic discharge protection circuit.