The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2007
Filed:
Nov. 04, 2004
Tzu-hsuan Hsu, Kaohsiung, TW;
Dun-nian Yaung, Taipei, TW;
Wen-de Wang, Minsyong Township, Chiayi County, TW;
Ho-ching Chien, Hsinchu, TW;
Shou-gwo Wuu, Hsinchu, TW;
Tzu-Hsuan Hsu, Kaohsiung, TW;
Dun-Nian Yaung, Taipei, TW;
Wen-De Wang, Minsyong Township, Chiayi County, TW;
Ho-Ching Chien, Hsinchu, TW;
Shou-Gwo Wuu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A complementary metal oxide semiconductor field effect transistor (CMOS-FET) image sensor. An active photosensing pixel is formed on a substrate. At least one side of the pixel has a width equal to or less than approximately 3 μm. At least one dielectric layer is disposed on the substrate covering the pixel. A color filter is disposed on the least one dielectric layer. A microlens array is disposed on the color filter of the pixel, and the sum of the thickness of all dielectric layers and the color filter divided by the pixel width is equal to or less than approximately 1.87.