The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2007
Filed:
May. 24, 2005
Shengwu Chang, South Hamilton, MA (US);
Joseph C. Olson, Beverly, MA (US);
Damian Brennan, Gloucester, MA (US);
Shengwu Chang, South Hamilton, MA (US);
Joseph C. Olson, Beverly, MA (US);
Damian Brennan, Gloucester, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for uniformity tuning in an ion implanter system. The method may comprise measuring an ion beam at a plurality of predetermined locations along a beam path. The method may also comprise calculating an ion beam profile along the beam path based at least in part on the ion beam measurements at the plurality of predetermined locations. The method may further comprise determining a desired velocity profile along the beam path based at least in part on the calculated ion beam profile such that the ion beam, when scanned according to the desired velocity profile, produces a desired ion beam profile along the beam path.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile