The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2007
Filed:
Jul. 11, 2005
Water Lur, Taipei, TW;
David Lee, Hsin-chu, TW;
Kuang-chih Wang, Taichung, TW;
Ming-sheng Yang, Hsin-chu, TW;
Water Lur, Taipei, TW;
David Lee, Hsin-chu, TW;
Kuang-Chih Wang, Taichung, TW;
Ming-Sheng Yang, Hsin-chu, TW;
United Microelectronics Corporation, Hsinchu, TW;
Abstract
An air gap structure and formation method for substantially reducing the undesired capacitance between adjacent interconnects, metal lines or other features in an integrated circuit device is disclosed. The air gap extends above, and may also additionally extend below, the interconnects desired to be isolated thus minimizing fringing fields between the lines. The integrated air gap structure and formation method can be utilized in conjunction with either damascene or conventional integrated circuit metallization schemes. Also, multiple levels of the integrated air gap structure can be fabricated to accommodate multiple metal levels while always ensuring that physical dielectric layer support is provided to the device structure underlying the interconnects.