The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2007
Filed:
Dec. 07, 2004
James D. Bernstein, Plano, TX (US);
Lance S. Robertson, Rockwall, TX (US);
Said Ghneim, Richardson, TX (US);
Nandu Mahalingam, Richardson, TX (US);
Benjamin Moser, Dallas, TX (US);
James D. Bernstein, Plano, TX (US);
Lance S. Robertson, Rockwall, TX (US);
Said Ghneim, Richardson, TX (US);
Nandu Mahalingam, Richardson, TX (US);
Benjamin Moser, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides a method for implanting ions in a substrate and a method for manufacturing an integrated circuit. The method for implanting ions in a substrate, among other steps, including placing a substrate () on an implant platen () such that a predominant axes () of the substrate () is rotated about 30 degrees to about 60 degrees or about 120 degrees to about 150 degrees offset from a radial with respect to the implant platen (), and further wherein the substrate () is not tilted. The method further includes implanting ions into the substrate (), the rotated position of the predominant axes () reducing shadowing.