The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2007
Filed:
Apr. 08, 2005
Applicants:
Yoshio Murakami, Tokyo, JP;
Toru Yamazaki, Tokyo, JP;
Yoshiro Aoki, Tokyo, JP;
Akihiko Endo, Tokyo, JP;
Inventors:
Yoshio Murakami, Tokyo, JP;
Toru Yamazaki, Tokyo, JP;
Yoshiro Aoki, Tokyo, JP;
Akihiko Endo, Tokyo, JP;
Assignee:
Sumitomo Mitsubishi Silicon Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 21/8222 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a SOI wafer includes a step of heat-treating a wafer in a furnace to form an SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order and a step of unloading the SOI wafer from the furnace maintained at a temperature of 250° C. to 800° C. to transfer the SOI wafer to an atmosphere containing hydrogen or water. The steps are performed in that order.