The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2007
Filed:
Feb. 17, 2004
Milan Pophristic, North Brunswick, NJ (US);
Michael Murphy, Somerset, NJ (US);
Richard A. Stall, Belle Mead, NJ (US);
Bryan S. Shelton, Bound Brook, NJ (US);
Linlin Liu, Hillsborough, NJ (US);
Alex D. Ceruzzi, Princeton Junction, NJ (US);
Milan Pophristic, North Brunswick, NJ (US);
Michael Murphy, Somerset, NJ (US);
Richard A. Stall, Belle Mead, NJ (US);
Bryan S. Shelton, Bound Brook, NJ (US);
Linlin Liu, Hillsborough, NJ (US);
Alex D. Ceruzzi, Princeton Junction, NJ (US);
Velox Semiconductor Corporation, Somerset, NJ (US);
Abstract
A repeatable and uniform low doped layer is formed using modulation doping by forming alternating sub-layers of doped and undoped nitride semiconductor material atop another layer. A Schottky diode is formed of such a low doped nitride semiconductor layer disposed atop a much more highly doped nitride semiconductor layer. The resulting device has both a low on-resistance when the device is forward biased and a high breakdown voltage when the device is reverse biased.