The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2007
Filed:
Dec. 16, 2002
Stephan A. Cohen, Wappingers Falls, NY (US);
Stephen Mcconnell Gates, Ossining, NY (US);
Alfred Grill, White Plains, NY (US);
Vishnubhai V. Patel, Yorktown, NY (US);
Stephan A. Cohen, Wappingers Falls, NY (US);
Stephen McConnell Gates, Ossining, NY (US);
Alfred Grill, White Plains, NY (US);
Vishnubhai V. Patel, Yorktown, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A diffusion barrier useful in semiconductor electronic devices, such as multi-level interconnect wiring structures, is provided. The diffusion barrier is characterized as having a low-dielectric constant of less than 3.5, preferably less than 3.0, as well as being capable of substantially preventing Cu and/or oxygen from diffusing into the active device areas of the electronic device. Since the diffusion barrier has a low-dielectric constant, the diffusion barrier has only a minor effect on the effective dielectric constant of the interconnect structure. The low-k diffusion barrier includes atoms of Si, C, H and N. The N atoms are non-uniformly distributed within the low-k diffusion barrier. Optionally, the low-k diffusion barrier may include atoms of Ge, O, halogens such as F or any combination thereof.