The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2007
Filed:
Apr. 29, 2003
Hua-yu Liu, Palo Alto, CA (US);
Hua-Yu Liu, Palo Alto, CA (US);
Synopsys, Inc., Mountain View, CA (US);
Abstract
Resolution enhancement techniques (RETs) aid in accurately transferring features on a layout to a wafer. Unfortunately, RETs may work well at one pitch but not another pitch. If image quality falls below an acceptable threshold at a certain pitch, then such a pitch is called a forbidden pitch. A cell library cell that can automatically avoid forbidden pitches is provided. In this method, evaluation points on edges of a feature in a cell can be analyzed based on a RET and a lithography model. Using this analysis, any forbidden pitch for the feature can be identified. Additionally, any forbidden pitch can be changed to an acceptable pitch, i.e. a pitch resulting in an acceptable image quality. The forbidden pitch information and the associated acceptable pitch information for the feature can be stored in a database to facilitate analyzing other features/cells.