The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2007
Filed:
Nov. 07, 2005
Hsin-ming Chen, Tainan Hsien, TW;
Hai-ming Lee, Taipei, TW;
Shih-jye Shen, Hsin-Chu, TW;
Ching-hsiang Hsu, Hsin-Chu, TW;
Hsin-Ming Chen, Tainan Hsien, TW;
Hai-Ming Lee, Taipei, TW;
Shih-Jye Shen, Hsin-Chu, TW;
Ching-Hsiang Hsu, Hsin-Chu, TW;
eMemory Technology Inc., Hsin-Chu, TW;
Abstract
A single-poly non-volatile memory device invented to integrate into logic process is disclosed. This non-volatile memory device includes a memory cell unit comprising a PMOS access transistor that is serially connected to a PMOS storage transistor formed in a cell array area, and, in a peripheral circuit area, a high-voltage MOS transistor having a high-voltage gate insulation layer is provided. The PMOS access transistor has an access gate oxide layer that has a thickness equal to the thickness of the high-voltage gate insulation layer in a peripheral circuit area.