The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2007
Filed:
Sep. 08, 2005
Applicants:
Takeshi Senda, Niigata, JP;
Koji Izunome, Niigata, JP;
Inventors:
Takeshi Senda, Niigata, JP;
Koji Izunome, Niigata, JP;
Assignee:
Toshiba Ceramics Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A manufacturing method for producing a stained silicon wafer has the steps of forming an SiGecomposition-graded layer of which Ge concentration is stepwisely increased on a single crystal silicon substrate, forming an SiGeuniform composition layer of which Ge concentration is constant on the SiGecomposition-graded layer, forming a stain-relaxed SiGelayer of which Ge concentration y is constant while y satisfies relationship of 0.5x≦y<x on the SiGeuniform composition layer and epitaxially growing a strained Si layer on the strain-relaxed SiGelayer.