The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2007
Filed:
Sep. 10, 2004
Hideaki Fukuzawa, Kanagawa-ken, JP;
Yuzo Kamiguchi, Kanagawa-ken, JP;
Katsuhiko Koui, Kanagawa-ken, JP;
Shin-ichi Nakamura, Kanagawa-ken, JP;
Hitoshi Iwasaki, Kanagawa-ken, JP;
Kazuhiro Saito, Tokyo, JP;
Hiromi Fuke, Kanagawa-ken, JP;
Masatoshi Yoshikawa, Kanagawa-ken, JP;
Susumu Hashimoto, Kanagawa-ken, JP;
Masashi Sahashi, Kanagawa-ken, JP;
Hideaki Fukuzawa, Kanagawa-ken, JP;
Yuzo Kamiguchi, Kanagawa-ken, JP;
Katsuhiko Koui, Kanagawa-ken, JP;
Shin-ichi Nakamura, Kanagawa-ken, JP;
Hitoshi Iwasaki, Kanagawa-ken, JP;
Kazuhiro Saito, Tokyo, JP;
Hiromi Fuke, Kanagawa-ken, JP;
Masatoshi Yoshikawa, Kanagawa-ken, JP;
Susumu Hashimoto, Kanagawa-ken, JP;
Masashi Sahashi, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, kawasaki-shi, JP;
Abstract
Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.