The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2007
Filed:
Dec. 06, 2004
Applicants:
Tetsuya Tada, Tsukuba, JP;
Toshihiko Kanayama, Tsukuba, JP;
Hidefumi Hiura, Tokyo, JP;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention achieves a shallow junction of a source and a drain, and provides a doping method which makes device properties reproducible and a semiconductor device fabricated using the method. In the present invention, doping for the semiconductor is conducted by attaching a molecular species with a higher electron affinity or lower ionization energy out of fullerene derivatives or metallocenes to the semiconductor surface to induce charge transfer from the molecule to the semiconductor.