The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2007
Filed:
May. 25, 2005
Karl M. Brown, Mountain View, CA (US);
John Pipitone, Livermore, CA (US);
Vineet Mehta, Sunnyvale, CA (US);
Ralf Hofmann, Soquel, CA (US);
Wei W. Wang, Santa Clara, CA (US);
Semyon Sherstinsky, San Francisco, CA (US);
Karl M. Brown, Mountain View, CA (US);
John Pipitone, Livermore, CA (US);
Vineet Mehta, Sunnyvale, CA (US);
Ralf Hofmann, Soquel, CA (US);
Wei W. Wang, Santa Clara, CA (US);
Semyon Sherstinsky, San Francisco, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas source coupled to the process gas inlet, a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency in a range between about 60 MHz and 81 MHz, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile