The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2007
Filed:
Jun. 17, 2005
Jean-michel Mirabel, Cabries, FR;
Arnaud Regnier, Le Tholonet, FR;
Rachid Bouchakour, Marseille, FR;
Romain Laffont, Marseille, FR;
Pascal Masson, Marseille, FR;
Jean-Michel Mirabel, Cabries, FR;
Arnaud Regnier, Le Tholonet, FR;
Rachid Bouchakour, Marseille, FR;
Romain Laffont, Marseille, FR;
Pascal Masson, Marseille, FR;
STMicroelectronics Rousset SAS, Rousset, FR;
Universite d'Aix Marseille I, Marseille Cedex, FR;
Abstract
The present invention relates to a floating-gate MOS transistor, comprising drain and source regions implanted into a silicon substrate, a channel extending between the drain and source regions, a tunnel oxide, a floating gate, a gate oxide and a control gate extending according to a determined gate length. According to the present invention, the control gate comprises a small gate and a large gate arranged side by side and separated by an electrically insulating material. Application to the production of memory cells without access transistor, and to the implementation of an erase-program method with reduced electrical stress for the tunnel oxide.