The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2007
Filed:
Nov. 03, 2004
Dun-nian Yaung, Taipei, TW;
Ho-ching Chien, Zhudong Town, Hsinchu County, TW;
Tzu-hsuan Hsu, Kaohsiung, TW;
Dun-Nian Yaung, Taipei, TW;
Ho-Ching Chien, Zhudong Town, Hsinchu County, TW;
Tzu-Hsuan Hsu, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
An image sensor cell includes a first MOS transistor coupled to an operating voltage for providing an output voltage of the image sensor cell with the output voltage changing conformingly with a voltage on a gate of the first MOS transistor. A photodiode is coupled to a floating node which further controls the voltage of the gate of the first MOS transistor. A photoconductor is coupled between the operating voltage and the floating node. The photoconductor has its resistance varying in response to a magnitude change of an imposed illumination so that the floating node is provided with additional electrical charges conformingly through the photoconductor while the photodiode drains electrical charges, thereby decreasing a voltage reduction rate of the voltage on the gate of the first MOS transistor.