The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2007
Filed:
Apr. 14, 2005
Yuuichi Takeuchi, Obu, JP;
Rajesh Kumar Malhan, Nagoya, JP;
Hiroyuki Matsunami, Yawata, JP;
Tsunenobu Kimoto, Kyoto, JP;
Yuuichi Takeuchi, Obu, JP;
Rajesh Kumar Malhan, Nagoya, JP;
Hiroyuki Matsunami, Yawata, JP;
Tsunenobu Kimoto, Kyoto, JP;
DENSO Corporation, Kariya, JP;
Abstract
A method for manufacturing a silicon carbide semiconductor device includes the steps of: forming a trench mask on an upper surface of a semiconductor substrate; forming the trench such that the trench having an aspect ratio equal to or larger than 2 and having a trench slanting angle equal to or larger than 80 degrees is formed; and removing a damage portion in such a manner that the damage portion disposed on an inner surface of the trench formed in the semiconductor substrate in the step of forming the trench is etched and removed in hydrogen atmosphere under decompression pressure at a temperature equal to or higher than 1600° C.