The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2007
Filed:
Aug. 17, 2004
Mariam G. Sadaka, Austin, TX (US);
Shawn G. Thomas, Gilbert, AZ (US);
Ted R. White, Austin, TX (US);
Chun-li Liu, Mesa, AZ (US);
Alexander L. Barr, Crolles, FR;
Bich-yen Nguyen, Austin, TX (US);
Voon-yew Thean, Austin, TX (US);
Mariam G. Sadaka, Austin, TX (US);
Shawn G. Thomas, Gilbert, AZ (US);
Ted R. White, Austin, TX (US);
Chun-Li Liu, Mesa, AZ (US);
Alexander L. Barr, Crolles, FR;
Bich-Yen Nguyen, Austin, TX (US);
Voon-Yew Thean, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A process for forming a semiconductor device. The process includes forming a template layer for forming a layer of strained silicon. In one example a layer of graded silicon germanium is formed where the germanium is at a higher concentration at the lower portion and at a lower concentration at a top portion. When subject to a condensation process, the germanium of the top portion of the layer diffuses to a remaining portion of the silicon germanium layer. Because the silicon germanium layer has a higher concentration of germanium at lower portions, germanium pile up after condensation may be reduced at the upper portion of the remaining portion of the silicon germanium layer.