The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2007

Filed:

Oct. 20, 2005
Applicants:

Hiroaki Himi, Nagoya, JP;

Akira Yamada, Nukata-gun, JP;

Takeshi Kuzuhara, Nukata-gun, JP;

Inventors:

Hiroaki Himi, Nagoya, JP;

Akira Yamada, Nukata-gun, JP;

Takeshi Kuzuhara, Nukata-gun, JP;

Assignee:

DENSO Corporation, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/0175 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes insulated and separated transistor elements successively connected to one another between ground potential and a predetermined potential. A transistor element at the GND potential side is a first stage and a transistor element at the predetermined potential side is an n-th stage. Resistance elements or capacitance elements are successively connected to one another in series between the GND potential and the predetermined potential. A resistance or capacitance element at the GND potential side is a first stage and a resistance or capacitance element at the predetermined potential side is an n-th stage. Gate terminals of the transistor elements at the respective stages excluding the transistor element at the first stage are successively connected to connection points. An output is taken from the terminal at the predetermined potential side of the transistor element of the n-th stage.


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