The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2007
Filed:
Mar. 23, 2005
Charles A. Cornell, Austin, TX (US);
Matthew S. Berzins, Cedar Park, TX (US);
Stephen M. Prather, Austin, TX (US);
Charles A. Cornell, Austin, TX (US);
Matthew S. Berzins, Cedar Park, TX (US);
Stephen M. Prather, Austin, TX (US);
Cypress Semiconductor Corp., San Jose, CA (US);
Abstract
A voltage level translation circuit includes a first power supply voltage, a second power supply voltage, wherein the second supply voltage is lower than the first supply voltage, a low voltage input, wherein the low voltage input is referenced from the second supply voltage, a resistive element leaker transistor having a source and a drain, wherein the source is coupled to the first power supply voltage, a PMOSFET having a gate and a source, wherein the source is coupled to the first power supply voltage, and a pulse generator coupled to the gate of the PMOSFET, wherein the pulse generator is capable of controlling the operation of the PMOSFET.