The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2007
Filed:
Jan. 27, 2005
Jong-ho Yun, Gyeonggi-do, KR;
Gil-heyun Choi, Gyeonggi-do, KR;
Seong-hwee Cheong, Seoul, KR;
Sug-woo Jung, Gyeonggi-do, KR;
Hyun-su Kim, Gyeonggi-do, KR;
Woong-hee Sohn, Gyeonggi-do, KR;
Jong-ho Yun, Gyeonggi-do, KR;
Gil-heyun Choi, Gyeonggi-do, KR;
Seong-hwee Cheong, Seoul, KR;
Sug-woo Jung, Gyeonggi-do, KR;
Hyun-su Kim, Gyeonggi-do, KR;
Woong-hee Sohn, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A metal salicide layer is formed by sequentially depositing a physical vapor deposition (PVD) metal layer and a chemical vapor deposition (CVD) metal layer on a semiconductor device having an exposed silicon surface so as to form a double metal layer. The semiconductor device is annealed to react the double metal layer with the silicon surface. At least a portion of the double layer that has not reacted with the silicon surface is stripped. The semiconductor device is annealed after stripping at least the portion of the double metal layer.