The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2007
Filed:
Apr. 01, 2003
Masakazu Yamaguchi, Kawasaki, JP;
Ichiro Omura, Yokohama, JP;
Wataru Saito, Kawasaki, JP;
Takashi Shinohe, Yokosuka, JP;
Hiromichi Ohashi, Yokohama, JP;
Masakazu Yamaguchi, Kawasaki, JP;
Ichiro Omura, Yokohama, JP;
Wataru Saito, Kawasaki, JP;
Takashi Shinohe, Yokosuka, JP;
Hiromichi Ohashi, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device comprises a drain layer of first conductivity type, drift layers of first and second conductivity types on the drain layer, an insulating film between the drift layers and contacting the drift layers, a first base layer of second conductivity type on a surface of the drift layer of first conductivity type, a source layer of first conductivity type selectively provided on a surface of the first base layer of second conductivity type, a gate insulating film on the first base layer of second conductivity type between the source layer and the drift layer, a gate electrode on the gate insulating film, a second base layer of second conductivity type on a surface of the drift layer, a first main electrode on the drain layer, and a second main electrode on the source layer, the first base layer and the second base layer.