The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2007
Filed:
Aug. 02, 2005
Da Zhang, Austin, TX (US);
Veer Dhandapani, Round Rock, TX (US);
Brian Goolsby, Austin, TX (US);
Bich-yen Nguyen, Austin, TX (US);
Da Zhang, Austin, TX (US);
Veer Dhandapani, Round Rock, TX (US);
Brian Goolsby, Austin, TX (US);
Bich-Yen Nguyen, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method for making a semiconductor device is provided herein. In accordance with the method, a semiconductor structure is provided which comprises a substrate () with a gate structure () disposed thereon, wherein the gate structure comprises a gate electrode () and at least one spacer structure (), and wherein the substrate comprises a first semiconductor material. A first trench () is created in the substrate adjacent to the gate structure through the use of a first etch. The gate electrode is then etched with a second etch. Preferably, the minimum cumulative reduction in thickness of the gate electrode from the first and second etches is d, the maximum depth of the first and second trenches after the first and second etches is d, and d≧d.