The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2007
Filed:
Apr. 04, 2005
Janes Jones, Legal Representative, Yorktown Heights, NY (US);
Jerry D. Ackaret, Beaverton, OR (US);
Michael A. Gaynes, Vestal, NY (US);
Michael S. Gordon, Yorktown Heights, NY (US);
Nancy C. Labianca, Yalesville, CT (US);
Janes Jones, legal representative, Yorktown Heights, NY (US);
Jerry D. Ackaret, Beaverton, OR (US);
Michael A. Gaynes, Vestal, NY (US);
Michael S. Gordon, Yorktown Heights, NY (US);
Nancy C. LaBianca, Yalesville, CT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An IC device is packaged for accelerated transient particle emission by doping the underfill thereof with a transient-particle-emitting material having a predetermined, substantially constant emission rate. The emission rate may be tunable. In one aspect, a radioactive adhesive composition is provided for bonding a semiconductor device to a chip carrier. The radioactive adhesive composition is made from a cured reaction product including a resin and a filler, and may be reworkable or non-reworkable. Either the resin or the filler, individually or both together as a mix, are doped substantially uniformly with the transient-particle-emitting material, thereby putting the transient-particle-emitting in close proximity with the IC to be tested. The underfill is formulated to have a stable chemistry, and the doped particles are encapsulated, so as to contain the emissions. Accelerated transient-particle-emission testing may then be performed on the IC in situ to provide accelerated detection of soft errors.