The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2007

Filed:

Mar. 02, 2006
Applicants:

Eiichi Ishikawa, Princeton, NJ (US);

Yasuyuki Saito, Kodaira, JP;

Masanao Sato, Tokyo, JP;

Naoki Yada, Sayama, JP;

Kiyoshi Matsubara, Higashimurayama, JP;

Inventors:

Eiichi Ishikawa, Princeton, NJ (US);

Yasuyuki Saito, Kodaira, JP;

Masanao Sato, Tokyo, JP;

Naoki Yada, Sayama, JP;

Kiyoshi Matsubara, Higashimurayama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor processing device is provided which includes a nonvolatile memory unit, a voltage generating unit, and a first terminal. The voltage generating unit generates a first voltage generated from an operation voltage provided from outside of the semiconductor processing device and provides the first voltage to the nonvolatile memory unit for storing data therein. The first terminal provides the first voltage generated by the voltage generating unit to outside of the semiconductor processing device. This first voltage provided to outside of the semiconductor processing device via the first terminal permits checking a voltage level of the first voltage and correcting this voltage level.


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