The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2007

Filed:

Aug. 17, 2005
Applicants:

Yoshihiro Nakata, Kawasaki, JP;

Shun-ichi Fukuyama, Kawasaki, JP;

Katsumi Suzuki, Kawasaki, JP;

Ei Yano, Kawasaki, JP;

Tamotsu Owada, Kawasaki, JP;

Iwao Sugiura, Kawasaki, JP;

Inventors:

Yoshihiro Nakata, Kawasaki, JP;

Shun-ichi Fukuyama, Kawasaki, JP;

Katsumi Suzuki, Kawasaki, JP;

Ei Yano, Kawasaki, JP;

Tamotsu Owada, Kawasaki, JP;

Iwao Sugiura, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.


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