The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2007
Filed:
Mar. 08, 2005
Gurtej Singh Sandhu, Boise, ID (US);
Randhir P S Thakur, Boise, ID (US);
Gurtej Singh Sandhu, Boise, ID (US);
Randhir P S Thakur, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
This invention is embodied in an improved process for growing high-quality silicon dioxide layers on silicon by subjecting it to a gaseous mixture of nitrous oxide (NO) and ozone (O). The presence of Oin the oxidizing ambiance greatly enhances the oxidation rate compared to an ambiance in which NO is the only oxidizing agent. In addition to enhancing the oxidation rate of silicon, it is hypothesized that the presence of Ointerferes with the growth of a thin silicon oxynitride layer near the interface of the silicon dioxide layer and the unreacted silicon surface which makes oxidation in the presence of NO alone virtually self-limiting. The presence of Oin the oxidizing ambiance does not impair oxide reliability, as is the case when silicon is oxidized with NO in the presence of a strong, fluorine-containing oxidizing agent such as NFor SF.