The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2007

Filed:

Feb. 27, 2004
Applicants:

Yasuhiko Sato, Yokosuka, JP;

Seiji Nakagawa, Danbury, CT (US);

Jun Idebuchi, Yokohama, JP;

Motoya Kishida, Yokohama, JP;

Shuichi Taniguchi, Yokohama, JP;

Tsuyoshi Shibata, Yokohama, JP;

Inventors:

Yasuhiko Sato, Yokosuka, JP;

Seiji Nakagawa, Danbury, CT (US);

Jun Idebuchi, Yokohama, JP;

Motoya Kishida, Yokohama, JP;

Shuichi Taniguchi, Yokohama, JP;

Tsuyoshi Shibata, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a semiconductor device comprises preparing a working film to be processed, forming an adhesion improving region on the working film for increasing an adhesion between the working film and a mask material containing carbon, forming the mask material on the working film, forming a resist pattern on the mask material, the mask material having a higher etching resistance for the working film than the resist pattern, transferring the pattern of the resist pattern onto the mask material, and etching the working film by using the mask material as a mask.


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