The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2007
Filed:
Jan. 07, 2007
Liang-chuan Lai, Hsinchu County, TW;
Pin-yao Wang, Hsinchu, TW;
Liang-Chuan Lai, Hsinchu County, TW;
Pin-Yao Wang, Hsinchu, TW;
Powerchip Semiconductor Corp., Hsinchu, TW;
Abstract
A substrate having a first dielectric layer, a first conductive layer and a second dielectric layer thereon is provided. A part of the second dielectric layer is removed to form a first opening having both ends with a select gate region respectively. The select gate region is constituted by a region with the second dielectric layer and a region without the second dielectric layer. A second conductive layer is formed to cover the second dielectric layer. A cap layer is formed on the second conductive layer. The cap layer, the second conductive layer, the second dielectric layer and the first conductive layer are patterned to form gate structures. The cap layer, the second conductive layer, the second dielectric layer and the first conductive layer between two adjacent select gate regions are removed to form a select gate structure. A doped region is formed in the substrate.