The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2007
Filed:
May. 23, 2006
Wei Zhang, Singapore, SG;
Chian-liang Lin, Citong Shiang, TW;
Jung-chen Yang, Chu-Pei, TW;
Chia-chun Hung, Taichung, TW;
Shih-min Liu, Jhuolan Township, TW;
Wei Zhang, Singapore, SG;
Chian-Liang Lin, Citong Shiang, TW;
Jung-Chen Yang, Chu-Pei, TW;
Chia-Chun Hung, Taichung, TW;
Shih-Min Liu, Jhuolan Township, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method is disclosed for forming at least one image sensor with improved sensitivity along with at least one transistor device. The method comprises forming at least a portion of the transistor device on a substrate, forming the image sensor by doping a predetermined area separated from the transistor device by a minimum predetermined distance, forming an etch stop layer for covering a contact area of the transistor device, removing at least a portion of the etch stop layer in the predetermined area for exposing the image sensor, and covering the image sensor and the transistor device by at least one transparent protection layer.