The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2007
Filed:
Apr. 28, 2004
Applicants:
Keisuke Nakazawa, Tokyo, JP;
Koji Yamakawa, Tokyo, JP;
Katsuaki Natori, Yokohama, JP;
Soichi Yamazaki, Yokohama, JP;
Hiroshi Itokawa, Yokohama, JP;
Hiroyuki Kanaya, Yokohama, JP;
Inventors:
Keisuke Nakazawa, Tokyo, JP;
Koji Yamakawa, Tokyo, JP;
Katsuaki Natori, Yokohama, JP;
Soichi Yamazaki, Yokohama, JP;
Hiroshi Itokawa, Yokohama, JP;
Hiroyuki Kanaya, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed is a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate and including a film which contains Pb, Sr, Zr, Ti, Ru and O and a dielectric film which contains Pb, Zr, Ti and O and which is provided on the film containing Pb, Sr, Zr, Ti, Ru and O.