The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2007
Filed:
Sep. 17, 2004
Koji Watadani, Kyoto-fu, JP;
Kenji Sato, Shiga-ken, JP;
Yoichiro Shimura, Yamanashi-ken, JP;
Hideo Tsuruta, Yamanashi-ken, JP;
Koji Watadani, Kyoto-fu, JP;
Kenji Sato, Shiga-ken, JP;
Yoichiro Shimura, Yamanashi-ken, JP;
Hideo Tsuruta, Yamanashi-ken, JP;
Abstract
The radiation detector according to this invention has a common electrode for bias voltage application formed on a surface of an amorphous selenium semiconductor film (a-Se semiconductor film) sensitive to radiation. The common electrode is a gold thin film having a thickness in a range of 100 to 1,000 Å. The gold thin film acting as the common electrode may be formed on the surface of the a-Se semiconductor film at a relatively low vapor deposition temperature and in a reduced vapor deposition time. This feature suppresses a generation of defects in the a-Se semiconductor film due to formation of the common electrode. The gold thin film for the common electrode is not so thick as in the prior art, but is 1,000 Å or less. With the reduced thickness, the common electrode has improved boding property with respect to the a-Se semiconductor film.