The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2007

Filed:

Nov. 12, 2004
Applicants:

Steven C. Avanzino, Cupertino, CA (US);

Nicholas H. Tripsas, San Jose, CA (US);

Jeffrey A. Shields, Sunnyvale, CA (US);

Fei Wang, San Jose, CA (US);

Richard P. Kingsborough, Acton, MA (US);

William Leonard, Brookline, MA (US);

Suzette K. Pangrle, Cupertino, CA (US);

Inventors:

Steven C. Avanzino, Cupertino, CA (US);

Nicholas H. Tripsas, San Jose, CA (US);

Jeffrey A. Shields, Sunnyvale, CA (US);

Fei Wang, San Jose, CA (US);

Richard P. Kingsborough, Acton, MA (US);

William Leonard, Brookline, MA (US);

Suzette K. Pangrle, Cupertino, CA (US);

Assignees:

Spansion LLC, Sunnyvale, CA (US);

Advanced Micro Devices, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed are methods for facilitating concurrent formation of copper vias and memory element structures. The methods involve forming vias over metal lines and forming copper plugs, wherein the copper plugs comprise memory element film forming copper plugs (memE copper plugs) and non-memory element forming copper plugs (non-memE copper plugs), forming a tantalum-containing cap over an upper surface of non-memE copper plugs, and depositing memory element films. The tantalum-containing cap prevents the formation of the memory element films in the non-memE copper plugs. The subject invention advantageously facilitates cost-effective manufacturing of semiconductor devices.


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