The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2007
Filed:
Oct. 07, 2004
Mitsuhiro Omura, Kawasaki, JP;
Makiko Katano, Yokohama, JP;
Shoko Ito, Yokohama, JP;
Takaya Matsushita, Yokohama, JP;
Hisashi Kaneko, Fujisawa, JP;
Mitsuhiro Omura, Kawasaki, JP;
Makiko Katano, Yokohama, JP;
Shoko Ito, Yokohama, JP;
Takaya Matsushita, Yokohama, JP;
Hisashi Kaneko, Fujisawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes subjecting a semiconductor wafer, which includes a copper layer formed above a semiconductor substrate and covered with an insulating film, to a dry etching using a fluorocarbon gas to partially remove the insulating film, thereby at least partially exposing a surface of the copper layer. The copper layer, the surface of which is at least partially exposed is subjected to a nitrogen plasma treatment. The semiconductor wafer having the nitrogen plasma-treated copper layer is exposed to atmosphere, and then the semiconductor wafer is subjected to a surface treatment.