The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2007
Filed:
Jun. 07, 2006
Sèbastien Kerdiles, Saint-Ismier, FR;
Fabrice Letertre, Grenoble, FR;
Christophe Morales, Pont de Claix, FR;
Hubert Moriceau, Saint Egrève, FR;
Sèbastien Kerdiles, Saint-Ismier, FR;
Fabrice Letertre, Grenoble, FR;
Christophe Morales, Pont de Claix, FR;
Hubert Moriceau, Saint Egrève, FR;
S.O.I. Tec Silicon on Insulator Technologies, Bernin, FR;
Commissariat à l 'Energie Atomique (CEA), Paris, FR;
Abstract
Methods are provided for producing a transfer layer of a semiconductor material on a final substrate. In some embodiments, the transfer layer is produced on the final substrate by forming a layer of semiconductor material on an initial support, assembling that layer and a final substrate by metal bonding, and mechanically separating the initial support from the layer at a weak interface that initially attached the layer to the initial support. An intermediate substrate can be obtained which can be used to fabricate a variety of components such as light-emitting diodes or laser diodes. These techniques can produce a transfer layer on a final substrate and a recyclable initial support that can be detached from the transfer layer for recycling by a non-destructive mechanical release.