The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2007

Filed:

May. 21, 2003
Applicants:

Steven T. Peake, Warrington, GB;

Philip Rutter, Stockport, GB;

Inventors:

Steven T. Peake, Warrington, GB;

Philip Rutter, Stockport, GB;

Assignee:

NXP, B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

Consistent with an example embodiment a trench-gate semiconductor device, for example a MOSFET or IGBT, having a field plate provided below the trenched gate is manufactured using a process with improved reproducibility. The process includes the steps of etching a first grove into the semiconductor body for receiving the gate, and etching a second groove into the top major surface of the semiconductor body, the second groove extending from the first groove and being narrower than the first groove. The invention enables better control of the vertical extent of the gate below the top major surface of the semiconductor body.


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