The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2007
Filed:
Apr. 20, 2004
Takeshi Akatsu, St. Nazaire les Eymes, FR;
Cecile Aulnette, Grenoble, FR;
Bruno Ghyselen, Seyssinet, FR;
Takeshi Akatsu, St. Nazaire les Eymes, FR;
Cecile Aulnette, Grenoble, FR;
Bruno Ghyselen, Seyssinet, FR;
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
The present invention relates to a method of fabrication of a substrate for an epitaxial growth. A relaxed epitaxial base layer is obtained on an auxiliary substrate. The invention allows the fabrication of substrates with a more efficient epitaxial growth of a material with a desired lattice parameter on another material with a different lattice parameter. The material can be grown with a high thermodynamic and crystallographic stability. At least a part of the epitaxial base layer is transferred onto a carrier substrate, forming a base substrate, and growing the material of the epitaxial base layer is further grown on the carrier substrate.