The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2007
Filed:
Jun. 16, 2004
Hemant P. Mungekar, San Jose, CA (US);
Young S Lee, Santa Clara, CA (US);
Manoj Vellaikal, Santa Clara, CA (US);
Karen Greig, Santa Clara, CA (US);
Bikram Kapoor, Santa Clara, CA (US);
Hemant P. Mungekar, San Jose, CA (US);
Young S Lee, Santa Clara, CA (US);
Manoj Vellaikal, Santa Clara, CA (US);
Karen Greig, Santa Clara, CA (US);
Bikram Kapoor, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The fluent gas is introduced into the substrate processing chamber at a flow rate of at least 500 sccm. A plasma is formed having an ion density of at least 10ions/cmfrom the process gas to deposit a first portion of the silicon oxide film over the substrate and into the gap. Thereafter, the deposited first portion is exposed to an oxygen plasma having at least 10ions/cm. Thereafter, a second portion of the silicon oxide film is deposited over the substrate and into the gap.