The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 12, 2007

Filed:

Sep. 07, 2004
Applicants:

Ting Gang Zhu, Somerset, NJ (US);

Bryan S. Shelton, Bound Brook, NJ (US);

Alex D. Ceruzzi, Princeton, NJ (US);

Linlin Liu, Hillsborough, NJ (US);

Michael Murphy, Somerset, NJ (US);

Milan Pophristic, North Brunswick, NJ (US);

Inventors:

Ting Gang Zhu, Somerset, NJ (US);

Bryan S. Shelton, Bound Brook, NJ (US);

Alex D. Ceruzzi, Princeton, NJ (US);

Linlin Liu, Hillsborough, NJ (US);

Michael Murphy, Somerset, NJ (US);

Milan Pophristic, North Brunswick, NJ (US);

Assignee:

Velox Semiconductor Corporation, Somerset, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01);
U.S. Cl.
CPC ...
Abstract

A guard ring is formed in a semiconductor region that is part of a Schottky junction or Schottky diode. The guard ring is formed by ion implantation into the semiconductor contact layer without completely annealing the semiconductor contact layer to form a high resistance region. The guard ring may be located at the edge of the layer or, alternatively, at a distance away from the edge of the layer. A Schottky metal contact is formed atop the layer, and the edges of the Schottky contact are disposed atop the guard ring.


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