The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2007
Filed:
Nov. 30, 2004
Applicants:
Cheng-yuan Tsai, Hsin-Chu, TW;
You-hua Chou, Taipei, TW;
Chih-lung Lin, Taipei, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/316 (2006.01); H01L 21/473 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for enhancing stability of a fluorinated silicon glass layer is disclosed. A fluorinated silicon glass layer provided on a substrate is subjected to a phosphorous-containing and hydrogen-containing gas such as phosphine (PH), for example. The gas forms reactive hydrogen species which removes fluorine radicals and reactive phosphorous species which forms a moisture-gettering and ion-gettering phosphorious oxide film the layer.