The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2007

Filed:

Oct. 29, 2004
Applicants:

Kenji Takeshita, Fremont, CA (US);

Tsuyoshi Aso, Tokyo, JP;

Seiji Kawaguchi, San Jose, CA (US);

Thomas Mcclard, Fremont, CA (US);

Wan-lin Chen, Sunnyvale, CA (US);

Enrico Magni, Pleasanton, CA (US);

Michael Kelly, Pleasanton, CA (US);

Michelle Lupan, Danville, CA (US);

Robert Hefty, Mountain View, CA (US);

Inventors:

Kenji Takeshita, Fremont, CA (US);

Tsuyoshi Aso, Tokyo, JP;

Seiji Kawaguchi, San Jose, CA (US);

Thomas McClard, Fremont, CA (US);

Wan-Lin Chen, Sunnyvale, CA (US);

Enrico Magni, Pleasanton, CA (US);

Michael Kelly, Pleasanton, CA (US);

Michelle Lupan, Danville, CA (US);

Robert Hefty, Mountain View, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a process of cleaning the chamber, or during a process for etching a semiconductor substrate in the chamber.


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