The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2007
Filed:
Apr. 21, 2003
Seung-young Son, Seoul, KR;
Cheol-kyu Lee, Yongin, KR;
Chang-jin Kang, Suwon, KR;
Byeong-yun Nam, Suwon, KR;
Seung-Young Son, Seoul, KR;
Cheol-Kyu Lee, Yongin, KR;
Chang-Jin Kang, Suwon, KR;
Byeong-Yun Nam, Suwon, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Methods for etching a metal layer and a metallization method of a semiconductor device using an etching gas that includes Cland Nare provided. A mask layer is formed on the metal layer, the etching gas is supplied to the metal layer, and the metal layer is etched by the etching gas using the mask layer as an etch mask. The metal layer may be formed of aluminum or an aluminum alloy. Cland Nmay be mixed at a ratio of 1:1 to 1:10. The etching gas may also include additional gases such as inactive gases or gases that include the elements H, O, F, He, or C. In addition, Nmay be supplied at a flow rate of from 45–65% of the total flow rate of the etching gas, which results in a reduction in the occurrence of micro-loading and cone-shaped defects in semiconductor devices.