The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2007
Filed:
Jul. 16, 2002
Nikolaos Bekiaris, San Jose, CA (US);
Timothy Weidman, Sunnyvale, CA (US);
Michael D. Armacost, San Jose, CA (US);
Mehul B. Naik, San Jose, CA (US);
Nikolaos Bekiaris, San Jose, CA (US);
Timothy Weidman, Sunnyvale, CA (US);
Michael D. Armacost, San Jose, CA (US);
Mehul B. Naik, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of forming a dual damascene structure on a substrate having a dielectric layer already formed thereon. In one embodiment the method includes depositing a first hard mask layer over the dielectric layer; depositing a second hard mask layer on the first hard mask layer; depositing a third hard mask layer on the second hard mask layer and completing formation of the dual damascene structure by etching a metal wiring pattern and a via pattern in the dielectric layer and filling the etched metal wiring pattern and via pattern with a conductive material. In one particular embodiment the second hard mask layer is an amorphous carbon layer and the third hard mask layer is a silicon-containing material.