The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2007
Filed:
Nov. 11, 2005
Chien-lung Chu, Taipei County, TW;
Wei-chung Tseng, Hsinchu, TW;
Saysamone Pittikoun, Hsinchu County, TW;
Houng-chi Wei, Hsinchu, TW;
Chien-Lung Chu, Taipei County, TW;
Wei-Chung Tseng, Hsinchu, TW;
Saysamone Pittikoun, Hsinchu County, TW;
Houng-Chi Wei, Hsinchu, TW;
Powchip Semiconductor Corp., Hsinchu, TW;
Abstract
A method for manufacturing semiconductor device is provided. First, a substrate is provided. Then, a plurality of first gate lines disposed in parallel to each other and a first dummy gate line disposed in a direction perpendicular to the first gate lines are formed on the substrate. There is a first gap between the first dummy gate line and the first gate lines and there is a second gap between every pair of adjacent first gate lines. Thereafter, a second composite layer and a conductive layer are sequentially formed over the substrate. The conductive layer is etched back to form a plurality of second device structures that completely fills the second gaps. Then, the conductive layer in the first gap is removed.