The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2007
Filed:
Oct. 15, 2004
Patrick Roland Lucien Malenfant, Clifton Park, NY (US);
Ji-ung Lee, Niskayuna, NY (US);
Yun LI, Schenectady, NY (US);
Walter Vladimir Cicha, Schenectady, NY (US);
Patrick Roland Lucien Malenfant, Clifton Park, NY (US);
Ji-Ung Lee, Niskayuna, NY (US);
Yun Li, Schenectady, NY (US);
Walter Vladimir Cicha, Schenectady, NY (US);
General Electric Company, Niskayuna, NY (US);
Abstract
The present invention is directed toward field effect transistors (FETs) and thin film transistors (TFTs) comprising carbon nanotubes (CNTs) and to methods of making such devices using solution-based processing techniques, wherein the CNTs within such devices have been fractionated so as to be concentrated in semiconducting CNTs. Additionally, the relatively low-temperature solution-based processing achievable with the methods of the present invention permit the use of plastics in the fabricated devices.