The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2007
Filed:
Aug. 22, 2003
Hisatsugu Kurita, Shibata, JP;
Manabu Hirasawa, Shibata, JP;
Hiromi Nagahama, Shibata, JP;
Koji Izumome, Shibata, JP;
Takao Ino, Yokohama, JP;
Jyunsei Yamabe, Yokohama, JP;
Naoya Hayamizu, Yokohama, JP;
Naoaki Sakurai, Yokohama, JP;
Hisatsugu Kurita, Shibata, JP;
Manabu Hirasawa, Shibata, JP;
Hiromi Nagahama, Shibata, JP;
Koji Izumome, Shibata, JP;
Takao Ino, Yokohama, JP;
Jyunsei Yamabe, Yokohama, JP;
Naoya Hayamizu, Yokohama, JP;
Naoaki Sakurai, Yokohama, JP;
Toshiba Ceramics Co., Ltd., Tokyo, JP;
Abstract
This invention provides a cleaning method of silicon wafer for obtaining a silicon wafer in which micro roughness thereof under spatial frequency of 20/μm is 0.3 to 1.5 nmin terms of power spectrum density, by passing a process of oxidizing the silicon wafer with ozonized water and a process of cleaning said oxidized silicon wafer with hydrofluoric acid. Consequently, it is possible to remove surface adhering pollutant such as particles and metallic foreign matter with the surface structure of silicon wafer flattened up to atomic level by annealing maintained.