The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2007
Filed:
May. 17, 2004
Stephen J. Morris, Shrewsbury, GB;
Stephen J. Morris, Shrewsbury, GB;
Therma-Wave, Inc., Fremont, CA (US);
Abstract
A method for modeling the complex refractive index of doped, strained or ultra-thin semiconductors starts with a model for a standard bulk material which may be in any form such as a pre-existing lookup table, a dispersion model derived from an effective medium approximation (EMA) or a critical point (CP) model. The modeling method perturbs the ∈curve of the bulk material by enhancing, suppressing or shifting the strong features of the curve. A Kramers-Kronig transformation is then applied to the ∈perturbation to obtain the corresponding perturbation to the ∈curve. The combination of the perturbed ∈curve and the correspondingly perturbed ∈curve are then used to obtain the complex dielectric function or complex refractive index of the modified material.