The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2007

Filed:

Jul. 23, 2004
Applicants:

Garth A. Brooks, St. Albans, VT (US);

Bruce W. Porth, Jericho, VT (US);

Steven M. Shank, Jericho, VT (US);

Eric J. White, Charlotte, VT (US);

Inventors:

Garth A. Brooks, St. Albans, VT (US);

Bruce W. Porth, Jericho, VT (US);

Steven M. Shank, Jericho, VT (US);

Eric J. White, Charlotte, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a structure, an array of structures and a memory cell, the method of fabricating a structure, including: (a) forming a trench in a substrate; (b) depositing a first layer of polysilicon on a surface of the substrate, the first layer of polysilicon filling the trench; (c) chemical-mechanical-polishing the first layer of polysilicon at a first temperature to expose the surface of the substrate; (d) removing an upper portion of the first polysilicon from the trench; (e) depositing a second layer of polysilicon on the surface of the substrate, the second layer of polysilicon filling the trench; and (f) chemical-mechanical-polishing the second layer of polysilicon at a second temperature to expose the surface of the substrate, the second temperature different from the first temperature.


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